SRAM Chip Async Single 2.5V/3.3V 8M-Bit 1M x 8 45ns 44-Pin TSOP-II
The CY62158E MoBL is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption.
- Very high speed: 45 ns
- Wide voltage range: 2.2 V - 3.6 V
- Pin compatible with CY62158DV30
- Ultra low standby power
- Typical standby current: 2 µA
- Maximum standby current: 8 µA
- Ultra low active power
- Typical active current: 1.8 mA at f = 1 MHz
- Easy memory expansion with CE1/, CE2, and OE features
- Automatic power down when deselected
- CMOS for optimum speed/power
- Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II packages
Мүнözдөмөлөр
| Бренд | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 MWords |
| Density | 8 Mb |
| Рабочая температура | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 25 mA |
| Описание продукта | 18.52 x 10.26 x 1.04 mm |
| Maximum R | 45 ns |
| Supplier | TSOP-II |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | China |
| Screening Level | Industrial |
| Minimum O | 2.2 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY62158EV30LL-45ZSXI