SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray

The CY7C1150KV18 is 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 18-bit words (CY7C1148KV18), or 36-bit words (CY7C1150KV18) that burst sequentially into or out of the device.

• 18-Mbit density (1 M × 18, 512 K × 36)
• 450-MHz clock for high bandwidth
• Two-word burst for reducing address bus frequency
• Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz
• Available in 2.0 clock cycle latency
• Two input clocks for precise DDR timing
  • SRAM uses rising edges only
• Echo clocks simplify data capture in high-speed systems
• Data valid pin (QVLD) to indicate valid data on the output
• Synchronous internally self-timed writes
• DDR II+ operates with 2.0 cycle read latency when DOFF/ is asserted HIGH
• Operates similar to DDR I device with one cycle read latency when DOFF/ is asserted LOW
• Core VDD = 1.8V ± 0.1 V; I/O VDDQ = 1.4 V to VDD
  • Supports both 1.5 V and 1.8 V I/O supply
• HSTL inputs and variable drive HSTL output buffers
• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
• Offered in both Pb-free and non Pb-free packages
• JTAG 1149.1 compatible test access port
• Phase-locked loop (PLL) for accurate data placement