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SRAM Chip Single 3V 4M-Bit 512K x 8 45ns 32-Pin SOIC Tube

CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC. This device is offered multiple pin configurations. Device is accessed by asserting the chip enable (CE\) input LOW. Data writes are performed by asserting the Write Enable (WE\) input LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Output Enable (OE\) input and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a HI-Z state when the device is deselected (CE\ HIGH or control signal OE\ is de-asserted).
  • High speed: 45 ns/55 ns
  • Ultra-low standby power
    • Typical standby current: 3.5 µA
    • Maximum standby current: 8.7 µA
  • Embedded ECC for single-bit error correction
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • 1.0-V data retention
  • TTL-compatible inputs and outputs
  • Pb-free 32-pin SOIC and 32-pin TSOP II packages

仕様

Brand Rochester Electronics
Datasheet PDF
Number Of Words 512 kWords
Density 4 Mbit
Operating temperature -40 to 85 °C
Pin Count 32
Number Of Ports 1
Mounting Surface Mount
Address B 19 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 20 mA
Product description 20.751 x 11.43 x 2.819 mm
Maximum R 45 ns
Supplier SOIC
Typical O 3.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320070
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 2.2 V
Maximum O 3.6 V
Maximum C 22.22 MHz
Lead Finish Pure Tin
Max Proce 260 °C
Msl Level 3
SKU: CY62148G30-45SXI