SRAM Chip Async Single 5V 4M-Bit 256K x 16 15ns 44-Pin SOJ

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable and Write Enable inputs LOW. If Byte Low Enable is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable is LOW, then data from I/O pins is written into the location specified on the address pins. Reading from the device is accomplished by taking Chip Enable and Output Enable LOW while forcing the Write Enable HIGH. If Byte Low Enable is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins are placed in a high-impedance state when the device is deselected, the outputs are disabled, the BHE and BLE are disabled, or during a write operation. The CY7C1041B is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout.

• High speed
  • tAA = 12 ns
• Low active power
  • 1540 mW (max.)
• Low CMOS standby power (L version)
  • 2.75 mW (max.)
• 2.0V Data Retention (400 µW at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE/ and OE/ and features