SRAM Chip Async Single 5V 2M-Bit 256K x 8 45ns 32-Pin TSOP-II T/R
The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
- High speed: 45 ns
- Wide voltage range: 4.5 V to 5.5 V
- Pin compatible with CY62138V
- Ultra low standby power
- Typical standby current: 1 µA
- Maximum standby current: 5 µA
- Ultra low active power
- Typical active current: 1.6 mA @ f = 1 MHz
- Easy memory expansion with CE/ and OE1/, CE/ and OE2/, and features
- Automatic power down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Available in Pb-free 32-pin SOIC and 32-pin thin small outline package (TSOP) II packages
仕様
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 2 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 18 mA |
| Product description | 21.08 x 10.29 x 1.05 mm |
| Maximum R | 45 ns |
| Supplier | TSOP-II |
| Typical O | 5.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8541290075 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY62138FLL-45ZSXIT