SRAM Chip Async Single 3V 8M-Bit 512K x 16 55ns 48-Pin TSOP-I
The AS6C8016 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
- Fast access time : 55ns
- Low power consumption:
- Operating current : 30mA (TYP.)
- Standby current : 6µA (TYP.) LL-version
- Single 2.7V ~ 5.5V power supply
- All inputs and outputs TTL compatible
- Fully static operation
- Tri-state output
- Data byte control : LB# (DQ0 ~ DQ7)
- UB# (DQ8 ~ DQ15)
- Data retention voltage : 1.5V (MIN.)
- Lead free and green package available
- Package : 44-pin 400 mil TSOP-II
- 48-ball 6mm x 8mm TFBGA
仕様
| Brand | Alliance Memory |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 512 kWords |
| Density | 8 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 48 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 19 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 40 mA |
| Product description | 12 x 18.4 x 1 mm |
| Maximum R | 55 ns |
| Supplier | TSOP-I |
| Typical O | 3.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Msl Level | 3 |
SKU: AS6C8016-55TIN