SRAM Chip Async Single 3.3V/5V 16K-Bit 2K x 8 100ns 24-Pin SOIC W

The DS2016 2k x 8 3V/5V operation static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7V and 5.5V. The chip enable input (active-low CE) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100ns when operated from a 5V power supply input and also provides relatively good performance of 250ns access while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density.

• Low-power CMOS design
• Standby current
  • 50nA max at t_A = 25°C V_CC = 3.0V
  • 100nA max at t_A = 25°C V_CC = 5.5V
  • 1µA max at t_A = +60°C V_CC = 5.5V

Full operation for V_CC = 5.5V to 2.7V

Data retention voltage = 5.5V to 2.0V

Fast 5V access time

• DS2016-100 100ns

Reduced-speed 3V access time

• DS2016-100 250ns

Operating temperature range of -40°C to +85°C

Full static operation

TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V

Available in 24-pin DIP and 24-pin SO packages

Suitable for both battery operated and battery backup applications