SRAM Chip Async Single 2.5V/3V 4M-Bit 256K x 16 70ns 44-Pin TSOP-II

The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 48-pin CSP (0.75 mm ball pitch).

• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
  • Active: 5.0 mW/MHz (typ)(VCC = 2.5 V): 6.0 mW/MHz (typ) (VCC = 3.0 V)
  • Standby: 1.25 µW (typ) (VCC = 2.5 V): 1.5 µW (typ) (VCC = 3.0 V)
• Completely static memory.
  • No clock or timing strobe required
• Access and cycle times are equal.
• Common data input and output.
  • Three state output
• Battery backup operation.
  • 2 chip selection for battery backup
• Temperature range: -40 to +85°C