SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 10ns 44-Pin TSOP-II T/R
The IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44-pinTSOP Type II and 48-pin Mini BGA (9mm x 11mm).
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clock or refreshrequired
- TTL compatible inputs and outputs
- Single power supply
- Available in 48-ball miniBGA and 44-pin TSOP
- Industrial and Automotive Temperature Support
- Lead-free available
- Data control for upper and lower bytes
仕様
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 512 kWords |
| Density | 8 Mbit |
| Operating temperature | -40 to 125 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 19 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 140 mA |
| Product description | 18.52 x 10.29 x 1.05 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Automotive |
| Minimum O | 2.4 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: IS64WV51216BLL-10CTLA3-TR