SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 70ns 32-Pin SOIC

The CY62148DV30 is a high-performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH).The eight input and output pins (I/O0 through I/O7) are placed in a high-impedance state when: Deselected Outputs are disabled When the write operation is activeWrite to the device by taking Chip Enable and Write Enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. Read from the device by taking Chip Enable and Output Enable LOW while forcing Write Enable HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

• Temperature Ranges
  • Industrial: -40 °C to 85 °C
• Very high speed: 55 ns
  • Wide voltage range: 2.20 V-3.60 V
• Pin-compatible with CY62148CV30
• Ultra low active power
  • Typical active current: 1.5 mA at f = 1 MHz
  • Typical active current: 8 mA at f = fmax (55-ns speed)
• Ultra low standby power
• Easy memory expansion with CE/ and OE/, and features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed/power
• Available in Pb-free 32-pin Small-outline integrated circuit