SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II T/R
The IS61WV1288EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 131,072 words by 8bits.Itis fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.The IS61WV1288EEBLL is packaged in the JEDEC standard 32-pin SOJ,TSOP-II, sTSOP-I, and 48-ball BGA (6mm x 8mm).
- High-speed access time: 8, 10 ns
- Low Active Power: 85 mW (typical)
- Low Standby Power: 7 mW (typical)
- Single power supply
- Fully static operation: no clock or refresh required
- Three state outputs
- Industrial and Automotive temperature support
- Lead-free available
- Error Detection and Error Correction
仕様
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 1 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 12 mA |
| Product description | 10.16 x 20.95 x 1 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 2.5, 3.3 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.4 V |
| Maximum O | 3.6 V |
| Data Rate | SDR |
| Lead Finish | Matte Tin |
| Max Proce | 260 °C |
| Msl Level | 3 |
SKU: IS61WV1288EEBLL-10TLI-TR