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3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O

The IDT71V3577 are high-speed SRAMs organized as 128K x 36. The IDT71V3579 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-through architecture). Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as the IDT71V3579 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will flow-through from the array after a clock-to-data access time delay from the rising clock edge of the same cycle. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin. The IDT71V3579 SRAMs utilize IDT’s latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA).
  • 128K x 36 memory configuration
  • Supports high system speed:
    • Commercial: -6.5ns up to 133MHz clock frequency (TQFP package only)
    • Commercial and Industrial: - 7.5ns up to 117MHz clock frequency - 8.0ns up to 100MHz clock frequency - 8.5ns up to 87MHz clock frequency
  • LBO input selects interleaved or linear burst mode
  • Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
  • 3.3V core power supply
  • Power down controlled by ZZ input
  • 3.3V I/O
  • Optional - Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
  • Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array

仕様

Brand Renesas Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 4.5 Mbit
Operating temperature -40 to 85 °C
Pin Count 100
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 210 mA
Product description 20 x 14 x 1.4 mm
Maximum R 8 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320070
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 3.135 V
Maximum O 3.465 V
Maximum C 100 MHz
Data Rate SDR
Architecture Flow-Through
Lead Finish Matte Tin
Max Proce 260
Msl Level 3
Product length 20
Product width 14 mm
Pitch 0.65
SKU: 71V3579S80PFGI