Trans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
  • Pb-free (RoHS compliant) package
  • Qualification report according to AEC-Q101 available

Specifications

Brand Infineon
Operating temperature -65 to 150 °C
Minimum D 70@15mA@8V
Type Prod NPN
Lead Finish Matte Tin
Max Proce 260
Maximum E 2 V
Product description 2.9 x 1.3 x 1 mm
Maximum C 12 V
Maximum C 20 V
Supplier SOT-23
Maximum D 0.065 A
Maximum P 450 mW
Schedule B 8541210080
HTSN 8542390001
Country of origin United States
Msl Level 1
Channel Type N
SKU: BFR 183 E6327