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SRAM Chip Sync Single 2.5V/3.3V 9M-Bit 256K x 36 5ns/2.5ns 100-Pin TQFP Tray

The GS88136C(T/D) is a 9,437,184-bit high performance synchronous SRAM with a 2- bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 2.5 V or 3.3 V +10%/–10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • JEDEC-standard 100-lead TQFP and 165-bump BGA packages
  • RoHS-compliant 100-lead TQFP and 165-bump BGA packages available

Specifications

Brand GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 9 Mbit
Operating temperature -40 to 85 °C
Pin Count 100
Number Of Ports 1
Mounting Surface Mount
Address B 17 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 185@Flow-Through|245@Pipelined mA
Product description 20 x 14 x 1.4 mm
Maximum R 5@Flow-Through|2.5@Pipelined ns
Supplier TQFP
Typical O 2.5, 3.3 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Country of origin Taiwan
Screening Level Industrial
Minimum O 2.3, 3 V
Maximum O 2.7, 3.6 V
Maximum C 200@Flow-Through|300@Pipelined MHz
Data Rate SDR
Architecture Flow-Through|Pipelined
Lead Finish Matte Tin
Max Proce 260
Msl Level 3
SKU: GS88136CGT-300I