वस्तु और कच्चा माल व्यापार मंच

SRAM Chip Sync Single 1.8V 36M-Bit 4M x 8 0.45ns 165-Pin FBGA

The GS8342T08 is a built in compliance with the -II SRAM pin out standard for Common I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. The GS8342T08 -II SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.Clocking and Addressing Schemes: The GS8342T08 is a -II SRAMs are synchronous devices. They employ two input register clock inputs, K and K. K and K are independent single-ended clock inputs, not differential inputs to a single differential clock input buffer. The device also allows the user to manipulate the output register clock inputs quasi independently with the C and C clock inputs. C and C are also independent single-ended clock inputs, not differential inputs. If the C clocks are tied high, the K clocks are routed internally to fire the output registers instead.Each internal read and write operation in a -II B2 RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed.When a new address is loaded into a x18 or x36 version of the part, A0 is used to initialize the pointers that control the data multiplexer / de-multiplexer so the RAM can perform "critical word first" operations. From an external address point of view, regardless of the starting point, the data transfers always follow the same sequence {0, 1} or {1, 0} .Unlike the x18 and x36 versions, the input and output data multiplexers of the x8 and x9 versions are not pre-set by address inputs and therefore do not allow "critical word first" operations. The address fields of the x8 and x9 -II B2 RAMs are one address pin less than the advertised index depth (e.g., the 4M x 8 has a 2M addressable index, and A0 is not an accessible address pin).
  • Simultaneous Read and Write ™ Interface
  • Common I/O bus
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write (x36, x18 and x9) and Nibble Write (x8) function
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation with self-timed Late Write
  • Fully coherent read and write pipelines
  • ZQ pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb devices
  • 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available
  • 3rd Generation, Green 13 mm x 15 mm, 165 FPBGA

Specifications

Brand GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 36 Mbit
Operating temperature 0 to 85 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 21 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 600 mA
Product description 15 x 13 x 0.94 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Country of origin Taiwan
Screening Level Commercial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 400 MHz
Data Rate DDR
Architecture Pipelined
SKU: GS8342T08BGD-400