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SRAM Chip Sync Single 1.8V 36M-Bit 1M x 36 0.45ns 165-Pin FBGA Tray

The GS8342T36AGE are built in compliance with the -II SRAM pin out standard for Common I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. The GS8342T36AGE -II SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
  • Simultaneous Read and Write -II™ Interface
  • Common I/O bus
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write (x36, x18, and x9) and Nibble Write (x8) function
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation with self-timed Late Write
  • Fully coherent read and write pipelines
  • ZQ pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available
  • Pin-compatible with present 9Mb, 18Mb, 72Mb and 144Mb devices

Specifications

Brand GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 1 MWords
Density 36 Mbit
Operating temperature 0 to 70 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 20 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 650 mA
Product description 17 x 15 x 1.04 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Screening Level Commercial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 250 MHz
Data Rate DDR
Architecture Pipelined
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: GS8342T36AGE-250