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SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.5ns 165-Pin FBGA

The CY7C1318BV18 is are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/? are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316BV18 and two 9-bit words in the case of CY7C1916BV18 that burst sequentially into or out of the device. The burst counter always starts with a ‘0’ internally in the case of CY7C1316BV18 and CY7C1916BV18. For CY7C1318BV18 and CY7C1320BV18, the burst counter takes in the least significant bit of the external address and bursts two 18-bit words (in the case of CY7C1318BV18) of two 36-bit words (in the case of CY7C1320BV18) sequentially into or out of the device. Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks CQ/??, eliminating the need to capture data separately from each individual DDR SRAM in the system design. Output data clocks (C/?) enable maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or ? input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.
  • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
  • 300 MHz clock for high bandwidth
  • 2-word burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) at 300 MHz
  • Two input clocks for precise DDR timing
    • SRAM uses rising edges only
  • Two input clocks for output data to minimize clock skew and flight time mismatches
  • Echo clocks simplify data capture in high-speed systems
  • Synchronous internally self-timed writes
  • 1.8V core power supply with HSTL inputs and outputs
  • Variable drive HSTL output buffers
  • Expanded HSTL output voltage (1.4V-VDD)
  • Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
  • Offered in both Pb-free and non Pb-free packages
  • JTAG 1149.1 compatible test access port
  • Delay Lock Loop (DLL) for accurate data placement

Caractéristiques

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 1 MWords
Density 18 Mbit
Operating temperature 0 to 70 °C
Pin Count 165
Number Of Ports 1
Mounting Surface Mount
Address B 20 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 510 mA
Product description 15 x 13 x 0.89 mm
Maximum R 0.5 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 167 MHz
Data Rate DDR
Architecture Pipelined
Lead Finish Tin/Lead/Silver|Tin/Lead
Max Proce 235
Msl Level 3
SKU: CY7C1318BV18-167BZC