SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 8ns 100-Pin TQFP
The CY7C1353G is a 3.3V, 256K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1353G is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock.
- Supports up to 133-MHz bus operations with zero wait states
- Data is transferred on every clock
- Pin compatible and functionally equivalent to ZBT™ devices
- Internally self timed output buffer control to eliminate the need to use OE
- Registered inputs for flow-through operation
- Byte Write capability
- 256K x 18 common IO architecture
- 2.5V/3.3V IO power supply (VDDQ)
- Fast clock-to-output times
- 6.5 ns (for 133-MHz device)
- Clock Enable (CEN) pin to suspend operation
- Synchronous self timed writes
- Asynchronous Output Enable
- Available in Pb-free 100-Pin TQFP package
- Burst Capability linear or interleaved burst order
- Low standby power
Caractéristiques
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 100 |
| Number Of Ports | 2 |
| Mounting | Surface Mount |
| Number Of | 18 Bit |
| Product description | 20 x 14 x 1.4 mm |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Maximum C | 100 MHz |
| Data Rate | SDR |
| Architecture | Flow-Through |
| Lead Finish | Matte Tin|Gold |
SKU: CY7C1353G-100AXC