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SRAM Chip Sync Dual 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA

The CY7C1512V18, and CY7C1514V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common IO devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with two 8-bit words (CY7C1510V18), 9-bit words (CY7C1525V18), 18-bit words (CY7C1512V18), or 36-bit words (CY7C1514V18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”. Depth expansion is accomplished with port selects, which enables each port to operate independently.
  • Separate independent read and write data ports
    • Supports concurrent transactions
  • 250 MHz clock for high bandwidth
  • 2-word burst on all accesses
  • Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 500 MHz) at 250 MHz
  • Two input clocks (K and K) for precise DDR timing
    • SRAM uses rising edges only
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Single multiplexed address input bus latches address inputs for both read and write ports
  • Separate port selects for depth expansion
  • Synchronous internally self-timed writes
  • Available in x8, x9, x18, and x36 configurations
  • Full data coherency, providing most current data
  • Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD
  • Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
  • Offered in both Pb-free and non Pb-free packages
  • Variable drive HSTL output buffers
  • JTAG 1149.1 compatible test access port
  • Delay Lock Loop (DLL) for accurate data placement
  • Configurations
    • CY7C1512V18 - 4M x 18

Caractéristiques

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 4 MWords
Density 72 Mbit
Operating temperature -40 to 85 °C
Pin Count 165
Number Of Ports 2
Mounting Surface Mount
Address B 22 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 900 mA
Product description 17 x 15 x 0.89 mm
Maximum R 0.45 ns
Supplier FBGA
Typical O 1.8000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 1.7 V
Maximum O 1.9 V
Maximum C 250 MHz
Data Rate QDR
Architecture Pipelined
Lead Finish Tin/Silver/Copper
Max Proce 260
Msl Level 3
SKU: CY7C1512V18-250BZXI