SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 10ns 44-Pin TSOP-II
The CY7C1011CV33 is a high performance complementary metal oxide semiconductor (CMOS) static RAM organized as 131,072 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected.
- Temperature ranges
- Industrial: -40 °C to 85 °C
- Automotive-A: -40 °C to 85 °C
- Automotive-E: -40 °C to 125 °C
- Pin and function compatible with CY7C1011BV33
- High speed
- tAA = 10 ns (Industrial and Automotive-A)
- tAA = 12 ns (Automotive-E)
- Low active power
- 360 mW (max) (Industrial and Automotive-A)
- 2.0 V data retention
- Automatic power down when deselected
- Independent control of upper and lower bits
- Easy memory expansion with Chip Enable (CE/ and OE/) and Output Enable () features
- Available in Pb-free 44-pin thin small outline package (TSOP) II, 44-pin thin quad flat package (TQFP), and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) packages
Caractéristiques
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 2 Mb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 100 mA |
| Product description | 18.52 x 10.26 x 1.04 mm |
| Maximum R | 10 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C1011CV33-10ZXI