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SRAM Chip Async Single 2.5V/3.3V 2M-Bit 256K x 8 45ns 32-Pin SOIC

The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected (CE1 HIGH or CE2 LOW).
  • Very high-speed: 45 ns
  • Temperature ranges
    • Industrial: -40 °C to 85 °C
    • Automotive-A: -40 °C to 85 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62138CV25/30/33
  • Ultra low standby power
    • Typical standby current: 1 µA
    • Maximum standby current: 5 µA
  • Ultra low active power
    • Typical active current: 1.6 mA at f = 1 MHz
  • Easy memory expansion with CE/ and OE1/, CE/ and OE2/, and Features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for Optimum speed and power
  • Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin SOIC, 32-pin TSOP I and 32-pin STSOP packages

Caractéristiques

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 2 Mb
Operating temperature -40 to 85 °C
Pin Count 32
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 18 mA
Product description 20.75 x 11.43 x 2.82 mm
Maximum R 45 ns
Supplier SOIC
Typical O 2.5, 3.3 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 2.2 V
Maximum O 3.6 V
Lead Finish Matte Tin|Gold
Max Proce 260
Msl Level 3
SKU: CY62138FV30LL-45SXI