SRAM Chip Async Single 2.5V/3.3V 16M-Bit 2M x 8 10ns 44-Pin TSOP-II T/R

The IS61WV20488 are very high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS61WV20488 are fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\ access. The IS61WV20488 operate from a single power supply and all inputs are TTL-compatible. The IS61WV20488 are available in 48 ball mini BGA and 44-pin TSOP (Type II) packages.

• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clocks or refresh required
• TTL compatible inputs and outputs
• Single power supply
  • Vdd 1.65V to 2.2V speed = 20ns for Vcc = 1.65V to 2.2V
• Packages available: 48-ball miniBGA (9mm x 11mm),44-pin TSOP (Type II)
• Commercial and Industrial Temperature Support
• Lead-free available