128K x 36 3.3V Dual-Port RAM, Interleaved I/O"s
128K x 36 3.3V Dual-Port RAM, Interleaved I/O"s
Caractéristiques
| Brand | Renesas Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 4.5 Mbit |
| Operating temperature | 0 to 70 °C |
| Pin Count | 208 |
| Number Of Ports | 2 |
| Mounting | Surface Mount |
| Address B | 34 Bit |
| Number Of | 72 Bit |
| Number Of | 36 Bit |
| Maximum O | 500 mA |
| Product description | 28 x 28 x 3.5 mm |
| Maximum R | 10 ns |
| Supplier | PQFP |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Philippines |
| Screening Level | Commercial |
| Minimum O | 3.15 V |
| Maximum O | 3.45 V |
| Lead Finish | Tin/Lead |
| Max Proce | 225 |
| Msl Level | 3 |
| Product length | 28 |
| Product width | 28 mm |
| Pitch | 0.5000 |
SKU: 70V659S10DR