Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

V_CE(sat)= 1.6 V (typ.) @ I_C= 80 A

Tight parameter distribution

Safe paralleling

Low thermal resistance