SRAM Chip Sync Quad 3.3V 4.5M-Bit 128K x 36 4ns 100-Pin TQFP

The Micron SyncBurst SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron’s 4Mb SyncBurst SRAMs integrate a 256K x 18, 128K x 32, or 128K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write (GW#).Asynchronous inputs include the output enable (OE#), clock (CLK) and snooze enable (ZZ). There is also a burst mode input (MODE) that selects between interleaved and linear burst modes. The data-out (Q), enabled by OE#, is also asynchronous. WRITE cycles can be from one to two bytes wide (x18) or from one to four bytes wide (x32/x36), as controlled by the write control inputs.Burst operation can be initiated with either address status processor (ADSP#) or address status controller (ADSC#) inputs. Subsequent burst addresses can be internally generated as controlled by the burst advance input (ADV#).

• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Single-cycle deselect (Pentium® BSRAM-compatible)
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 165-pin FBGA package
• 100-pin TQFP package
• Low capacitive bus loading
• x36 versions available