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SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 3.5ns 100-Pin TQFP

The CY7C1327G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable , depth-expansion chip enables, burst control inputs (ADSC, ADSP, and ADV), write enables, and global write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin.
  • Registered inputs and outputs for pipelined operation
  • 256 K × 18 common I/O Architecture
  • 3.3 V core power supply (VDD)
  • 2.5 V I/O power supply (VDDQ)
  • Fast clock-to-output times
    • 3.5 ns (for 166-MHz device)
  • Provide high performance 3-1-1-1 access rate
  • User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
  • Separate processor and controller address strobes
  • Synchronous self-timed writes
  • Asynchronous output enable
  • Offered in Pb-free 100-pin TQFP package
  • “ZZ” sleep mode option

Especificaciones

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 4.5 Mb
Operating temperature 0 to 70 °C
Pin Count 100
Number Of Ports 2
Mounting Surface Mount
Address B 18 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 240 mA
Product description 20 x 14 x 1.4 mm
Maximum R 3.5 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 166 MHz
Data Rate SDR
Architecture Pipelined
Lead Finish Matte Tin|Gold
Max Proce 260
Msl Level 3
SKU: CY7C1327G-166AXC