SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 8 0.45ns 165-Pin FBGA Tray
GS8182S08BD is a built in compliance with the Sigma SIO DDR-II SRAM pin out standard for Separate I/O synchronous SRAMs. They are 18,874,368-bit (18Mb) SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.Clocking and Addressing Schemes: A Burst of 2 Sigma SIO DDR-II SRAM is a synchronous device. It employs dual input register clock inputs, K and K. The device also allows the user to manipulate the output register clock input quasi independently with dual output register clock inputs, C and C. If the C clocks are tied high, the K clocks are routed internally to fire the output registers instead. Each Burst of 2 Sigma SIO DDR-II SRAM also supplies Echo Clock outputs, CQ and CQ, which are synchronized with read data output. When used in a source synchronous clocking scheme, the Echo Clock outputs can be used to fire input registers at the data’s destination. Each internal read and write operation in a Sigma SIO DDR-II B2 RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a Sigma SIO DDR-II B2 is always one address pin less than the advertised index depth (e.g., the 2M x 8 has a 1M addressable index).
- Simultaneous Read and Write Sigma SIO™ Interface
- JEDEC-standard pinout and package
- Dual Double Data Rate interface
- Byte Write controls sampled at data-in time
- DLL circuitry for wide output data valid window and future frequency scaling
- Burst of 2 Read and Write
- 1.8 V +100/–100 mV core power supply
- 1.5 V or 1.8 V HSTL Interface
- Pipelined read operation
- Fully coherent read and write pipelines
- ZQ mode pin for programmable output drive strength
- IEEE 1149.1 JTAG-compliant Boundary Scan
- Pin-compatible with present 9Mb, 36Mb, and 72Mb and future 144Mb devices
- 3rd Generation, 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
- RoHS-compliant 165-bump BGA package available
Especificaciones
| Brand | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 2 MWords |
| Density | 18 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 165 |
| Number Of Ports | 2 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 430 mA |
| Product description | 15 x 13 x 0.94 mm |
| Maximum R | 0.45 ns |
| Supplier | FBGA |
| Typical O | 1.8000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 1.7 V |
| Maximum O | 1.9 V |
| Maximum C | 250 MHz |
| Data Rate | DDR |
| Architecture | Pipelined |
| Lead Finish | Tin/Lead |
SKU: GS8182S08BD-250I