SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin SOJ
The CY7C199CN[1] is a high performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that reduces power consumption when deselected. See the Truth Table on page 4 in this data sheet for a complete description of read and write modes. The CY7C199CN is available in 28-pin molded SOJ and 28-pin DIP package(s).
- Fast access time: 15 ns
- Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
- complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Transistor transistor logic (TTL) compatible inputs and outputs
- 2.0 V data retention
- Low CMOS standby power
- Automated power-down when deselected
- Available in Pb-free 28-pin molded small outline J-lead (SOJ) and 28-pin DIP packages
Especificaciones
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 32 kWords |
| Density | 256 Kb |
| Operating temperature | -40 to 85 °C |
| Pin Count | 28 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 15 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 85 mA |
| Product description | 18.11 x 7.62 x 2.41 mm |
| Maximum R | 12 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| ECCN | EAR99 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Industrial |
| Minimum O | 4.5 V |
| Maximum O | 5.5 V |
| Lead Finish | Matte Tin|Gold |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY7C199CN-12VXI