Plataforma de comercio de materias primas

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organizedas 256K x 16. It is fabricated using high-perfomance, high-reliability CMOStechnology. This state-of-the-art technology, combined with innovativecircuit design techniques, provides a cost-effective solution for high-speedmemory needs. The IDT71V416 has an output enable pin which operates as fast as5ns, with address access times as fast as 10ns. All bidirectional inputs andoutputs of the IDT71V416 are LVTTL-compatible and operation is from asingle 3.3V supply. Fully static asynchronous circuitry is used, requiringno clocks or refresh for operation. The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x9mm package.
  • 256K x 16 advanced high-speed CMOS Static RAM
  • JEDEC Center Power / GND pinout for reduced noise.
  • Equal access and cycle times – Commercial and Industrial: 10/12/15ns
  • One Chip Select plus one Output Enable pin
  • Bidirectional data inputs and outputs directly LVTTL-compatible
  • Low power consumption via chip deselect
  • Upper and Lower Byte Enable Pins
  • Single 3.3V power supply
  • Available in 44-pin, 400 mil plastic SOJ package and a 44- pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

Especificaciones

Brand Renesas Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 256 kWords
Density 4 Mbit
Operating temperature -40 to 85 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 180 mA
Product description 28.6 x 10.2 x 2.18 mm
Maximum R 12 ns
Supplier SOJ
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320070
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 3 V
Maximum O 3.6 V
Lead Finish Tin/Lead
Max Proce 225
Msl Level 3
SKU: 71V416S12YI