SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 55ns 44-Pin TSOP-II T/R
The ISSI IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. The IS62WV12816BLL is a packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).
- High-speed access time: 45ns, 55ns, 70ns
- CMOS low power operation
- 36 mW (typical) operating
- 9 µW (typical) CMOS standby
- TTL compatible interface levels
- Single power supply
- 2.5V--3.6V VDD (62WV12816BLL)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- 2CS Option Available
- Lead-free available
Especificaciones
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 2 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Maximum O | 3 mA |
| Product description | 18.51 x 10.26 x 1.05 mm |
| Maximum R | 55 ns |
| Supplier | TSOP-II |
| Typical O | 3.3000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 2.5 V |
| Maximum O | 3.6 V |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: IS62WV12816BLL-55TLI-TR