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SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 15ns 44-Pin TSOP-II T/R

The IS64WV6416BLL is a high-speed, 1,048,576- bit static RAM organized as 65,536 words by 16 bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The IS61/64WV6416BLL is packaged in the JEDEC standard 44-pin TSOP-II, 44-pin 400-mil SOJ, and 48-pin mini BGA (6mm x 8mm).
  • High-speed access time
    • 12 ns: 3.3V + 10%
    • 15 ns: 2.5V-3.6V
  • CMOS low power operation
    • 50 mW (typical) operating
    • 25 µW (typical) standby
  • TTL compatible interface levels
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Automotive Temperature Available
  • Lead-free available

Especificaciones

Brand ISSI
Datasheet PDF
Timing Type Asynchronous
Number Of Words 64 kWords
Density 1 Mbit
Operating temperature -40 to 125 °C
Pin Count 44
Number Of Ports 1
Mounting Surface Mount
Address B 16 Bit
Number Of 16 Bit
Number Of 16 Bit
Maximum O 50 mA
Product description 18.52 x 10.29 x 1.05 mm
Maximum R 15 ns
Supplier TSOP-II
Typical O 3.3000 V
ECCN 3A991
Schedule B 8542320040
HTSN 8542320041
Country of origin Taiwan
Screening Level Automotive
Minimum O 2.5 V
Maximum O 3.6 V
Lead Finish Matte Tin
Max Proce 260
Msl Level 3
SKU: IS64WV6416BLL-15TLA3-TR