SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 10ns 32-Pin SOJ T/R
The ISSI IS63LV1024 is a very high-speed,low power, 131,072-word by 8-bit CMOS static RAM inrevolutionary pinout. The IS63LV1024/IS63LV1024L is fabricatedusing ISSI"s high-performance CMOS technology.This highly reliable process coupled with innovative circuitdesign techniques, yields higher performance and lowpower consumption devices. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down to 250 µW (typical) with CMOS input levels.The IS63LV1024/IS63LV1024L operates from a single 3.3Vpower supply and all inputs are TTL-compatible.
- High-speed access times: 8, 10, 12 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE\ and OE\ options
- CE\ power-down
- Fully static operation: no clock or refresh required
- TTL compatible inputs and outputs
- Single 3.3V power supply
- Packages available:
- 32-pin 300-mil SOJ
- 32-pin 400-mil SOJ
- 32-pin TSOP (Type II)
- 32-pin STSOP (Type I)
- 36-pin BGA (8mmx10mm)
- Lead-free Available
Especificaciones
| Brand | ISSI |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 128 kWords |
| Density | 1 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 17 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 160 mA |
| Product description | 21.08 x 10.29 x 3.75 mm |
| Maximum R | 10 ns |
| Supplier | SOJ |
| Typical O | 3.3000 V |
| ECCN | 3A991 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 3.15 V |
| Maximum O | 3.45 V |
| Lead Finish | Matte Tin |
| Max Proce | 245 |
| Msl Level | 3 |
SKU: IS63LV1024L-10KLI-TR