SRAM Chip Async Single 2.5V/3V/5V 8M-Bit 512K x 16 45ns 48-Pin VFBGA Tray

The CY62156ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

• High Speed: 45 ns
• Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
• Ultra Low Standby Power
  • Typical standby current: 2 µA
  • Maximum standby current: 8 ?A
• Ultra Low Active Power
  • Typical active current: 1.8 mA at f = 1 MHz
• Easy Memory Expansion with CE/1, CE2, and OE/ Features
• Automatic Power Down when Deselected
• CMOS for Optimum Speed and Power
• Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) packages