SRAM Chip Async Single 2.5V/3.3V 16M-Bit 1M x 16 10ns 48-Pin TFBGA

The ISSIIS61WV102416ALL/BLLandIS64WV102416BLLare high-speed, 16M-bit static RAMs organized as 1024Kwords by 16 bits. It is fabricated using ISSI"s high-performanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldshigh-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The device is packaged in the JEDEC standard 48-pinTSOP Type I and 48-pin Mini BGA (9mm x 11mm).

• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE\ power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply Vdd 1.65V to 2.2V (IS61WV102416ALL) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV102416BLL) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5%
• Packages available:
  • 48-ball miniBGA (9mm x 11mm)
  • 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes