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SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 3.5ns 100-Pin TQFP

The CY7C1367B SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to four bytes wide as controlled by the byte write control inputs. GW active LOW causes all bytes to be written. This device incorporates an additional pipelined enable register which delays turning off the output buffers an additional cycle when a deselect is executed.This feature allows depth expansion without penalizing system performance. The CY7C1367B operates from a +3.3V core power supply while all outputs operate with a +3.3V or a +2.5V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.
  • Supports bus operation up to 225 MHz
  • Available speed grades are 225, 200 and 166 MHz
  • Registered inputs and outputs for pipelined operation
  • Optimal for performance (Double-Cycle deselect)
    • Depth expansion without wait state
  • 3.3V -5% and +10% core power supply (VDD)
  • 2.5V / 3.3V I/O operation
  • Fast clock-to-output times
    • 2.8 ns (for 225-MHz device)
    • 3.0 ns (for 200-MHz device)
    • 3.5 ns (for 166-MHz device)
  • Provide high-performance 3-1-1-1 access rate
  • User-selectable burst counter supporting Intel? Pentium? interleaved or linear burst sequences
  • Separate processor and controller address strobes
  • Synchronous self-timed writes
  • Asynchronous output enable
  • Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA and 165-Ball fBGA packages
  • IEEE 1149.1 JTAG-Compatible Boundary Scan
  • “ZZ” Sleep Mode Option

Specifications

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 512 kWords
Density 9 Mb
Operating temperature -40 to 85 °C
Pin Count 100
Number Of Ports 1
Mounting Surface Mount
Address B 19 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 180 mA
Product description 20 x 14 x 1.4 mm
Maximum R 3.5 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Industrial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 166 MHz
Data Rate SDR
Architecture Pipelined
Lead Finish Tin/Lead
Max Proce 220
Msl Level 3|5
SKU: CY7C1367B-166AI