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SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8ns 100-Pin TQFP

The CY7C1353F is a 3.3V, 256K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1353F is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions, All synchronous inputs pass through input registers controlled by the rising edge of the clock.
  • Can support up to 133-MHz bus operations with zero wait states
    • Data is transferred on every clock
  • Pin compatible and functionally equivalent to ZBT™ devices
  • Internally self-timed output buffer control to eliminate the need to use OE
  • Registered inputs for flow-through operation
  • Byte Write capability
  • 256K x 18 common I/O architecture
  • 2.5V / 3.3V I/O power supply
  • Fast clock-to-output times
    • 6.5 ns (for 133-MHz device)
    • 7.5 ns (for 117-MHz device)
    • 8.0 ns (for 100-MHz device)
    • 11.0 ns (for 66-MHz device)
  • Clock Enable (CEN) pin to suspend operation
  • Synchronous self-timed writes
  • Asynchronous Output Enable
  • JEDEC-standard 100 TQFP package

Specifications

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 4.5 Mb
Operating temperature 0 to 70 °C
Pin Count 100
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 205 mA
Product description 20 x 14 x 1.4 mm
Maximum R 8 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 100 MHz
Data Rate SDR
Architecture Flow-Through
Lead Finish Tin/Lead
Max Proce 220
Msl Level 3|5
SKU: CY7C1353F-100AC