SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA
The GS8672T20BE -II+ ECCRAMs are built in compliance with the -II+ SRAM pin out standard for Common I/O synchronous SRAMs. They are 75,497,472-bit (72Mb) SRAMs. The GS8672T20BE SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
- 2.5 Clock Latency
- On-Chip ECC with virtually zero SER
- Simultaneous Read and Write ™ Interface
- Common I/O bus
- JEDEC-standard package
- Double Data Rate interface
- Byte Write capability
- Burst of 2 Read and Write
- On-Die Termination (ODT) on Data (DQ), Byte Write (BW), and Clock (K, K) outputs
- 1.8 V +100/–100 mV core power supply
- 1.5 V HSTL Interface
- Pipelined read operation with self-timed Late Write
- Fully coherent read and write pipelines
- ZQ pin for programmable output drive strength
- IEEE 1149.1 JTAG-compliant Boundary Scan
- Pin-compatible with 36Mb and 144Mb devices
- 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
- RoHS-compliant 165-bump BGA package available
Specifications
| Brand | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 4 MWords |
| Density | 72 Mbit |
| Operating temperature | -40 to 100 °C |
| Pin Count | 165 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 21 Bit |
| Number Of | 18 Bit |
| Number Of | 18 Bit |
| Maximum O | 1270 mA |
| Product description | 17 x 15 x 1.04 mm |
| Maximum R | 0.45 ns |
| Supplier | FBGA |
| Typical O | 1.8000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | Taiwan |
| Screening Level | Industrial |
| Minimum O | 1.7 V |
| Maximum O | 1.9 V |
| Maximum C | 500 MHz |
| Data Rate | DDR |
| Architecture | Pipelined |
SKU: GS8672T20BGE-500I