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SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.5ns 100-Pin TQFP Tray

The CY7C1360C/CY7C1362C SRAM integrates 256 K × 36 and 512 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE1), depth-expansion chip enables (CE2 and CE3[1]), burst control inputs (ADSC, ADSP, and ADV), write enables (BWX, and BWE), and global write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin.
  • Supports bus operation up to 200 MHz
  • Available speed grades: 200 MHz, and 166 MHz
  • Registered inputs and outputs for pipelined operation
  • 3.3 V core power supply (VDD)
  • 2.5 V/3.3 V I/O operation (VDDQ)
  • Fast clock-to-output times
    • 3.0 ns (for 200 MHz device)
  • Provide high performance 3-1-1-1 access rate
  • User selectable burst counter supporting Intel? Pentium® interleaved or linear burst sequences
  • Separate processor and controller address strobes
  • Synchronous self-timed writes
  • Asynchronous output enable
  • Single cycle chip deselect
  • TQFP available with 3-chip enable and 2-chip enable
  • IEEE 1149.1 JTAG-compatible boundary scan

Specifications

Brand Rochester Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 9 Mb
Operating temperature 0 to 70 °C
Pin Count 100
Number Of Ports 4
Mounting Surface Mount
Address B 18 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 180 mA
Product description 20 x 14 x 1.4 mm
Maximum R 3.5 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Country of origin United States
Screening Level Commercial
Minimum O 3.135 V
Maximum O 3.6 V
Maximum C 166 MHz
Data Rate SDR
Architecture Pipelined
Lead Finish Matte Tin|Gold
Max Proce 260
Msl Level 3
SKU: CY7C1360C-166AXC