SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 8ns/3ns 100-Pin TQFP Tray
The GS84018A is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018A/32/36A is available in a JEDEC standard 100-lead TQFP or 119-Bump BGA package.
- FT pin for user-configurable flow through or pipelined operation
- Single Cycle Deselect (SCD) operation
- 3.3 V +10%/–5% core power supply
- 2.5 V or 3.3 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipelined mode
- Byte Write (BW) and/or Global Write (GW) operation
- Common data inputs and data outputs
- Clock control, registered, address, data, and control Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 119-bump BGA package (NRND)
- 2nd Generation, Green TQFP
Specifications
| Brand | GSI Technology |
|---|---|
| Datasheet | |
| Timing Type | Synchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mbit |
| Operating temperature | 0 to 70 °C |
| Pin Count | 100 |
| Number Of Ports | 2 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 18 Bit |
| Number Of | 18 Bit |
| Maximum O | 210@Flow-Through|335@Pipelined mA |
| Product description | 20 x 14 x 1.4 mm |
| Maximum R | 8@Flow-Through|3@Pipelined ns |
| Supplier | TQFP |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.B |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Screening Level | Commercial |
| Minimum O | 3.135 V |
| Maximum O | 3.6 V |
| Maximum C | 111@Flow-Through|180@Pipelined MHz |
| Data Rate | SDR |
| Architecture | Flow-Through|Pipelined |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: GS84018AGT-180