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SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 4.2ns/2.5ns 100-Pin TQFP

The GS816018D is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
  • Military Temperature Range
  • FT pin for user-configurable flow through or pipeline operation
  • Single Cycle Deselect (SCD) operation
  • 2.5 V or 3.3 V +10%/–10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Default to Interleaved Pipeline mode
  • Byte Write (BW) and/or Global Write (GW) operation
  • Internal self-timed write cycle
  • Automatic power-down for portable applications
  • RoHS-compliant 100-lead TQFP package
  • 1MB product Family
  • 13 mm x 15 mm, 165 FPBGA
  • Default to SCD x18 Interleaved Pipeline mode

Specifications

Brand GSI Technology
Datasheet PDF
Timing Type Synchronous
Number Of Words 1 MWords
Density 18 Mbit
Operating temperature 0 to 85 °C
Pin Count 100
Number Of Ports 2
Mounting Surface Mount
Address B 21 Bit
Number Of 18 Bit
Number Of 18 Bit
Maximum O 250@Flow-Through|320@Pipelined mA
Product description 20 x 14 x 1.4 mm
Maximum R 4.2@Flow-Through|2.5@Pipelined ns
Supplier TQFP
Typical O 2.5, 3.3 V
ECCN 3A991.B.2.B
Schedule B 8542320040
HTSN 8542320041
Country of origin Taiwan
Screening Level Commercial
Minimum O 2.3, 3 V
Maximum O 2.7, 3.6 V
Maximum C 238@Flow-Through|375@Pipelined MHz
Data Rate SDR
Architecture Flow-Through|Pipelined
SKU: GS816018DGT-375