SRAM Chip Async Single 3V 4M-Bit 256K x 16 45ns 44-Pin TSOP-II Tray
The CY621472E30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
- Very high speed: 45 ns
- Temperature range
- Industrial: -40 °C to +85 °C
- Wide voltage range: 2.20 V to 3.60 V
- Ultra low standby power
- Typical standby current: 1 µA
- Maximum standby current: 7 µA (Industrial)
- Ultra low active power
- Typical active current: 2 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2, and OE Features
- Automatic power down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Available in Pb-free 44-pin thin small outline package (TSOP) II package
- Byte power down feature
Specifications
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 256 kWords |
| Density | 4 Mbit |
| Operating temperature | -40 to 85 °C |
| Pin Count | 44 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 18 Bit |
| Number Of | 16 Bit |
| Number Of | 16 Bit |
| Product description | 18.517(Max) x 10.262(Max) x 1.044(Max) |
| Maximum R | 45 ns |
| Supplier | TSOP II |
| Typical O | 3.0000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320070 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Automotive |
| Minimum O | 2.2 V |
| Maximum O | 3.6 V |
| Max Proce | 260 |
| Msl Level | 3 |
SKU: CY621472E30LL-45ZSXA