Commodity trading platform

SRAM Chip Async Single 3V 16M-Bit 2M x 8 45ns 48-Pin VFBGA

The CY62168EV30 is a high performance CMOS static RAM organized as 2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.
  • Very high speed: 45 ns
  • Wide voltage range: 2.20 V to 3.60 V
  • Ultra low standby power
    • Typical standby current: 1.5 µA
    • Maximum standby current: 12 µA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1/, CE2 and OE/ features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin TSOP I package

Specifications

Brand Rochester Electronics
Datasheet PDF
Timing Type Asynchronous
Number Of Words 2 MWords
Density 16 Mb
Operating temperature -40 to 85 °C
Pin Count 48
Number Of Ports 1
Mounting Surface Mount
Address B 21 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 30 mA
Product description 8 x 6 x 0.74 mm
Maximum R 45 ns
Supplier VFBGA
Typical O 3.0000 V
ECCN 3A991.B.2.A
Schedule B 8542320070
HTSN 8542320041
Country of origin Thailand
Screening Level Industrial
Minimum O 2.2 V
Maximum O 3.6 V
Lead Finish Tin/Silver/Copper
Max Proce 240|260
Msl Level 3
SKU: CY62168EV30LL-45BVXI