SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin TSOP-II

The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

• Single supply: 3.3 V ± 0.3 V
• Access time: 10ns/12 ns (max)
• Completely static memory
  • No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
  • All inputs and outputs
• Operating current: 145/130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pin out
• Temperature range: -40 to +85°C