SRAM Chip Async Single 3.3V 4M-Bit 1M x 4-Bit 15ns 32-Pin SOJ
The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A19).
- Pin- and function-compatible with CY7C1046B
- High speed
- tAA = 10 ns
- CMOS for optimum speed and power
- Low active power
- ICC = 90 mA at 10 ns
- Low CMOS standby power
- ISB2 = 10 mA
- Data retention at 2.0 V
- Automatic power-down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE and OE features
- Available in lead-free 400-mil-wide 32-pin SOJ package
Specifications
| Brand | Rochester Electronics |
|---|---|
| Datasheet | |
| Timing Type | Asynchronous |
| Number Of Words | 1 MWords |
| Density | 4 Mb |
| Operating temperature | 0 to 70 °C |
| Pin Count | 32 |
| Number Of Ports | 1 |
| Mounting | Surface Mount |
| Address B | 20 Bit |
| Number Of | 4 Bit |
| Number Of | 4 Bit |
| Maximum O | 80 mA |
| Product description | 21.08 x 10.29 x 2.62 mm |
| Maximum R | 15 ns |
| Supplier | SOJ |
| Typical O | 3.3000 V |
| ECCN | 3A991.B.2.A |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Country of origin | United States |
| Screening Level | Commercial |
| Minimum O | 3 V |
| Maximum O | 3.6 V |
| Lead Finish | Tin/Lead |
| Max Proce | 220 |
| Msl Level | 1|2|3 |
SKU: CY7C1046CV33-15VC