SRAM Chip Async Single 3.3V 16M-Bit 1M x 16 45ns 48-Pin VFBGA T/R

The IS62WV102416EBLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. When CS1\ is HIGH (deselected) or when CS2\ is low (deselected) or when CS1\ is low , CS2\ is high and both LB\ and UB\are HIGH, the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable WE\ controls both writing and reading of the memory. A data byte allows Upper Byte UB\ and Lower Byte LB\ access. The IS62WV102416EBLL are packaged in the JEDEC standard 48-pin BGA (6mm x 8mm) .

• High-speed access time: 45ns, 55ns
• CMOS low power operation
• Operating (typical)
  • 10.8mW (1.8V), 18mW (3.0V)
  • CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V) TTL compatible interface levels
• Single power supply: 2.2V-3.6V Vdd
• Data control for upper and lower bytes
• Industrial and Automotive temperature support