SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 45ns 44-Pin TSOP-II T/R

The CY62157EV30 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Lifeä (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

• Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM)
• High speed: 45 ns
• Temperature ranges
  • Industrial: -40 °C to +85 °C
  • Automotive-A: -40 °C to +85 °C
  • Automotive-E: -40 °C to +125 °C
• Wide voltage range: 2.20 V to 3.60 V
• Pin compatible with CY62157DV30
• Ultra low standby power
  • Typical standby current: 2 µA
  • Maximum standby current: 8 µA (Industrial)
• Ultra low active power
  • Typical active current: 1.8 mA at f = 1 MHz
• Easy memory expansion with CE1/, CE2, and OE/ features
• Automatic power down when deselected
• Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
• Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA), Pb-free 44-pin TSOP II and 48-pin TSOP I packages