SRAM Chip Async Single 2.5V/3.3V 16M-Bit 1M x 16 10ns 48-Pin VFBGA

The CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device features fast access times (10 ns) and a unique ultra-low power Deep Sleep mode. With Sleep mode currents as low as 22 µA, the CY7S1061G device combines the best features of fast and low-power SRAM in industry-standard package options. The device also features embedded ECC. ECC logic can detect and correct single-bit error in the accessed location. The CY7S1061GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

• High speed
  • tAA = 10 ns
• Ultra-low power PowerSnooze™ device
  • Deep Sleep (DS) current IDS = 22-µA maximum
• Low active and standby currents
  • ICC = 90-mA typical
  • ISB2 = 20-mA typical
• Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
• Embedded error-correcting code (ECC) for single-bit error correction
• 1.0-V data retention
• Transistor-transistor logic (TTL) compatible inputs and outputs
• Error indication (ERR) pin to indicate 1-bit error detection and correction
• Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages