NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16bit 100ns 64-Pin FBGA Tray
The S29GL512S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for embedded applications that require higher density, better performance and lower power consumption.
Specifications
| Brand | Rochester Electronics |
|---|---|
| Maximum P | 192/Sector ms |
| Ecc Support | No |
| Simultane | No |
| Lead Finish | Tin/Silver/Copper |
| Screening Level | Industrial |
| Program Current | 100 mA |
| Boot Block | Yes |
| Block Org | Symmetrical |
| Erase Sus | Yes |
| Interface Type | Parallel |
| Programmi | 2.7, 3.6 V |
| Density | 512 Mb |
| Msl Level | 3 |
| Maximum R | 100 ns |
| Maximum O | 60 mA |
| Architecture | Sectored |
| Typical O | 3, 3.3 V |
| Product description | 9 x 9 x 0.6 mm |
| Timing Type | Asynchronous |
| Operating temperature | -40 to 85 °C |
| Address B | 25 Bit |
| Maximum E | 1.1/Sector s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Country of origin | United States |
| Number Of Words | 32 MWords |
| Number Of | 16 Bit |
| Minimum O | 2.7 V |
| Supplier | FBGA |
| Max Proce | 260 |
| Maximum O | 3.6 V |
| Cell Type | NOR |
| Oe Access Time | 25 ns |
| Location | Bottom|Top |
| Maximum P | 15 ns |
| Page Read | 25 mA |
SKU: S29GL512S10DHI020