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3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM

3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM

Specifications

Brand Renesas Electronics
Datasheet PDF
Timing Type Synchronous
Number Of Words 256 kWords
Density 9 Mbit
Operating temperature -40 to 85 °C
Pin Count 100
Number Of Ports 1
Mounting Surface Mount
Address B 18 Bit
Number Of 36 Bit
Number Of 36 Bit
Maximum O 285 mA
Product description 20 x 14 x 1.4 mm
Maximum R 7.5 ns
Supplier TQFP
Typical O 3.3000 V
ECCN 3A991.B.2.A
Schedule B 8542320040
HTSN 8542320041
Screening Level Industrial
Minimum O 3.135 V
Maximum O 3.465 V
Maximum C 117 MHz
Data Rate SDR
Architecture Flow-Through
Lead Finish Matte Tin
Max Proce 260
Msl Level 3
Product length 20
Product width 14 mm
Pitch 0.6500
SKU: 71V67703S75PFGI8