Trans GP NPN 12V 0.05A 3-Pin SOT-323 T/R
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
- Maximum stable gain 18 dB at 900 MHz
- 11 GHz fT silicon technology
Spezifikationen
| Brand | NXP |
|---|---|
| Operating temperature | -40 to 150 °C |
| Minimum D | 60@15mA@8V |
| Maximum T | 11000 MHz |
| Type Prod | NPN |
| Lead Finish | Tin |
| Max Proce | 260 |
| Maximum E | 2 V |
| Product description | 2.2(Max) x 1.35(Max) x 1(Max) |
| Maximum C | 12 V |
| Maximum C | 24 V |
| Supplier | SOT-323 |
| Maximum D | 0.05 A |
| Maximum P | 450 mW |
| Schedule B | 8541210080 |
| HTSN | 8541210075 |
| Country of origin | Malaysia |
| Screening Level | Automotive |
| Msl Level | 1 |
SKU: BFU550WF